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IRF7526D1PBF fetky mosfet & schottky diode description co-packaged hexfet ? power mosfet and schottky diode p-channel hexfet low v f schottky rectifier generation 5 technology micro8 footprint lead-free v dss = -30v r ds(on) = 0.20 ? schottky vf = 0.39v micro8 notes: repetitive rating C pulse width limited by max. junction temperature (see fig. 9) i sd -1.2a, di/dt 160a/s, v dd v (br)dss , t j 150c pulse width 300s C duty cycle 2% when mounted on 1 inch square copper board to approximate typical multi-layer pcb thermal resistance top view 8 12 3 4 5 6 7 a as g dd k k www.irf.com 1 absolute maximum ratings parameter maximum units r ja junction-to-ambient ? 100 c/w thermal resistance ratings parameter maximum units i d @ t a = 25c -2.0 i d @ t a = 70c -1.6 i dm pulsed drain current -16 p d @t a = 25c 1.25 p d @t a = 70c 0.8 linear derating factor 10 mw/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c continuous drain current, v gs @ -4.5v power dissipation a w the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulatorapplications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, pda, etc. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the lowprofile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. downloaded from: http:///
IRF7526D1PBF 2 www.irf.com mosfet electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 CCC CCC v v gs = 0v, i d = -250a CCC 0.17 0.20 v gs = -10v, i d = -1.2a CCC 0.30 0.40 v gs = -4.5v, i d = -0.60a v gs(th) gate threshold voltage -1.0 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 0.94 CCC CCC s v ds = -10v, i d = -0.60a CCC CCC -1.0 v ds = -24v, v gs = 0v CCC CCC -25 v ds = -24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 7.5 11 i d = -1.2a q gs gate-to-source charge CCC 1.3 1.9 nc v ds = -24v q gd gate-to-drain ("miller") charge CCC 2.5 3.7 v gs = -10v, see fig. 6 t d(on) turn-on delay time CCC 9.7 CCC v dd = -15v t r rise time CCC 12 CCC i d = -1.2a t d(off) turn-off delay time CCC 19 CCC r g = 6.2 ? t f fall time CCC 9.3 CCC r d = 12 ?, c iss input capacitance CCC 180 CCC v gs = 0v c oss output capacitance CCC 87 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 42 CCC ? = 1.0mhz, see fig. 5

? a na ns parameter min. typ. max. units conditions i s continuous source current( body diode) CCC CCC -1.25 i sm pulsed source current (body diode) CCC CCC -9.6 v sd body diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.2a, v gs = 0v t rr reverse recovery time (body diode) CCC 30 45 ns t j = 25c, i f = -1.2a q rr reverse recovery charge CCC 37 55 nc di/dt = 100a/s a mosfet source-drain ratings and characteristics parameter max. units conditions i f(av) max. average forward current 1.9 50% duty cycle. rectangular wave, t a = 25c 1.3 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.06 v r = 30v t j = 25c 16 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/s rated v r schottky diode electrical specifications v ma ( hexfet is the reg. tm for international rectifier power mosfet's ) see fig. 14 downloaded from: http:///
IRF7526D1PBF www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20s pulse width t = 150c j 0.1 1 10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -1.2a d power mosfet characteristics downloaded from: http:///
IRF7526D1PBF 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 4 8 12 16 20 024681 01 2 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v dsds i = -1.2a d for test circuit see figure 9 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d aj 100s 1ms 10ms 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1. 4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) power mosfet characteristics downloaded from: http:///
IRF7526D1PBF www.irf.com 5 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical on-resistance vs. drain current

? fig 11. typical on-resistance vs. gate voltage

? 0 .0 0 .5 1 .0 1 .5 01234 a vgs = -10v vgs = -4.5v d -i , drain current (a) 0 .10 0 .20 0 .30 0 .40 0 .50 0 .60 3 6 9 12 15 a i = -2.0a gs -v , gate-to-source voltage (v) power mosfet characteristics downloaded from: http:///
IRF7526D1PBF 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage 0 .0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 r 100c 75c 50c 25c reverse voltage - v (v) 125c a t = 150c j fig. 12 -typical forward voltage drop characteristics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1 .0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a average forward current - i (a) allowable ambient temperature - (c ) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 80% rated r = 100c/w square wave thja r forward voltage drop - v f (v) downloaded from: http:///
IRF7526D1PBF www.irf.com 7 fig 15a. basic gate charge waveform q g q gs q gd v g charge fig 15b. gate charge test circuit d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 16b. switching time waveforms fig 16a. switching time test circuit downloaded from: http:///
IRF7526D1PBF 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? !! "#
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IRF7526D1PBF www.irf.com 9 micro8 part marking information micro8 package outlinedimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x n otes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x lot code (xx) example: this is an irf7501 part number p = designates lead - free product (opt ional) w = we e k y = ye ar dat e code (yw) - s ee table below ww = (1-26) if preceded by las t digit of calendar year year y work we e k w 9 2009 5 2005 2003 2002 20012004 3 2 14 2007 20062008 7 68 2010 0 03 02 0104 c b ad 26 2425 z xy b 2002 b 28 ww = (27-52) if preceded by a letter year 2001 y a week wor k 27 wa k 2010 f 2006 2004 20032005 d ce 2008 20072009 h gj x 50 30 29 d c 5152 yz downloaded from: http:///
IRF7526D1PBF 10 www.irf.com micro8 tape & reel informationdimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . outline conforms to eia-481 & eia-541. 2 . controlling dimension : millimeter. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/05 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. downloaded from: http:///

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